TSM4ND65CI

Part Number	TSM4ND65CI
Manufacturer	TSC (Taiwan Semiconductor)
Other Part Numbers	1801-TSM4ND65CI-ND 1801-TSM4ND65CI TSM4ND65CI-ND TSM4ND65CI RLG TSM4ND65CI C0G
Description	MOSFET N-CH 650V 4A ITO220
Detailed Description	N-Channel 650 V 4A (Tc) 41.6W (Tc) Through Hole ITO-220

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		TSC (Taiwan Semiconductor)
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-220-3 Full Pack, Isolated Tab
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		4A (Tc)
Rds On (Max) @ Id, Vgs		2.6Ohm @ 1.2A, 10V
Power Dissipation (Max)		41.6W (Tc)
Vgs(th) (Max) @ Id		3.8V @ 250µA
Supplier Device Package		ITO-220
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±30V
Drain to Source Voltage (Vdss)		650 V
Gate Charge (Qg) (Max) @ Vgs		16.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		596 pF @ 50 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

Can ship immediately.

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