TSM4ND60CI C0G

Part Number	TSM4ND60CI C0G
Manufacturer	TSC (Taiwan Semiconductor)
Other Part Numbers	1801-TSM4ND60CIC0G-ND 1801-TSM4ND60CIC0G TSM4ND60CI
Description	MOSFET N-CH 600V 4A ITO220
Detailed Description	N-Channel 600 V 4A (Tc) 41.6W (Tc) Through Hole ITO-220

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		TSC (Taiwan Semiconductor)
Series
Packaging		Tube
Part Status		Obsolete
Package / Case		TO-220-3 Full Pack, Isolated Tab
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		4A (Tc)
Rds On (Max) @ Id, Vgs		2.2Ohm @ 1.4A, 10V
Power Dissipation (Max)		41.6W (Tc)
Vgs(th) (Max) @ Id		3.8V @ 250µA
Supplier Device Package		ITO-220
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±30V
Drain to Source Voltage (Vdss)		600 V
Gate Charge (Qg) (Max) @ Vgs		17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		582 pF @ 50 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

This product is no longer manufactured.