TK12A60D(STA4,Q,M) _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	TK12A60D(STA4,Q,M)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Other Part Numbers	TK12A60D(STA4QM)-ND TK12A60D(STA4QM) TK12A60DSTA4QM
Description	MOSFET N-CH 600V 12A TO220SIS
Detailed Description	N-Channel 600 V 12A (Ta) 45W (Tc) Through Hole TO-220SIS
Manufacturer Standard Lead Time	32 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Toshiba Electronic Devices and Storage Corporation
Series		π-MOSVII
Packaging		Tube
Part Status		Active
Package / Case		TO-220-3 Full Pack
Mounting Type		Through Hole
Operating Temperature		150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		12A (Ta)
Rds On (Max) @ Id, Vgs		550mOhm @ 6A, 10V
Power Dissipation (Max)		45W (Tc)
Vgs(th) (Max) @ Id		4V @ 1mA
Supplier Device Package		TO-220SIS
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±30V
Drain to Source Voltage (Vdss)		600 V
Gate Charge (Qg) (Max) @ Vgs		38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		1800 pF @ 25 V

RESOURCE TYPE		LINK
Datasheets		TK12A60D(STA4,Q,M)

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

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