TJ15S06M3L(T6L1,NQ _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	TJ15S06M3L(T6L1,NQ
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Other Part Numbers	264-TJ15S06M3L(T6L1,NQTR-ND 264-TJ15S06M3L(T6L1,NQCT-ND 264-TJ15S06M3L(T6L1,NQDKR-ND TJ15S06M3LT6L1NQ 264-TJ15S06M3L(T6L1,NQTR 264-TJ15S06M3L(T6L1,NQCT TJ15S06M3L(T6L1NQ-ND TJ15S06M3L(T6L1NQ 264-TJ15S06M3L(T6L1,NQDKR
Description	MOSFET P-CH 60V 15A DPAK
Detailed Description	P-Channel 60 V 15A (Ta) 41W (Tc) Surface Mount DPAK+
Manufacturer Standard Lead Time	32 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Toshiba Electronic Devices and Storage Corporation
Series		U-MOSVI
Packaging		Tape & Reel (TR) Cut Tape (CT)
Part Status		Active
Package / Case		TO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting Type		Surface Mount
Operating Temperature		175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		P-Channel
Current - Continuous Drain (Id) @ 25°C		15A (Ta)
Rds On (Max) @ Id, Vgs		50mOhm @ 7.5A, 10V
Power Dissipation (Max)		41W (Tc)
Vgs(th) (Max) @ Id		3V @ 1mA
Supplier Device Package		DPAK+
Drive Voltage (Max Rds On, Min Rds On)		6V, 10V
Vgs (Max)		+10V, -20V
Drain to Source Voltage (Vdss)		60 V
Gate Charge (Qg) (Max) @ Vgs		36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		1770 pF @ 10 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

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