SPB35N10 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	SPB35N10
Manufacturer	IR (Infineon Technologies)
Other Part Numbers	SPB35N10INTR-ND SPB35N10INTR SPB35N10INCT
Description	MOSFET N-CH 100V 35A TO263-3
Detailed Description	N-Channel 100 V 35A (Tc) 150W (Tc) Surface Mount PG-TO263-3-2
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		IR (Infineon Technologies)
Series		SIPMOS®
Packaging		Tape & Reel (TR)
Part Status		Obsolete
Package / Case		TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		35A (Tc)
Rds On (Max) @ Id, Vgs		44mOhm @ 26.4A, 10V
Power Dissipation (Max)		150W (Tc)
Vgs(th) (Max) @ Id		4V @ 83µA
Supplier Device Package		PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		100 V
Gate Charge (Qg) (Max) @ Vgs		65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		1570 pF @ 25 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		RoHS non-compliant

This product is no longer manufactured.