SIJA54ADP-T1-GE3 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	SIJA54ADP-T1-GE3
Manufacturer	Vishay / Siliconix
Other Part Numbers	742-SIJA54ADP-T1-GE3TR-ND 742-SIJA54ADP-T1-GE3CT-ND 742-SIJA54ADP-T1-GE3DKR-ND 742-SIJA54ADP-T1-GE3DKR 742-SIJA54ADP-T1-GE3CT 742-SIJA54ADP-T1-GE3TR
Description	N-CHANNEL 40 V (D-S) MOSFET POWE
Detailed Description	N-Channel 40 V 35.4A (Ta), 126A (Tc) 5.2W (Ta), 65.7W (Tc) Surface Mount PowerPAK® SO-8
Manufacturer Standard Lead Time	18 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Vishay / Siliconix
Series		TrenchFET® Gen IV
Packaging		Tape & Reel (TR) Cut Tape (CT)
Part Status		Active
Package / Case		PowerPAK® SO-8
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		35.4A (Ta), 126A (Tc)
Rds On (Max) @ Id, Vgs		2.3mOhm @ 15A, 10V
Power Dissipation (Max)		5.2W (Ta), 65.7W (Tc)
Vgs(th) (Max) @ Id		2.5V @ 250µA
Supplier Device Package		PowerPAK® SO-8
Drive Voltage (Max Rds On, Min Rds On)		4.5V, 10V
Vgs (Max)		+20V, -16V
Drain to Source Voltage (Vdss)		40 V
Gate Charge (Qg) (Max) @ Vgs		70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		3850 pF @ 20 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
RoHS Status		ROHS3 Compliant

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