PSMN018-100ESFQ _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	PSMN018-100ESFQ
Manufacturer	NXP Semiconductors
Other Part Numbers	2156-PSMN018-100ESFQ-954-ND 2156-PSMN018-100ESFQ-954
Description	NEXPERIA PSMN018 - NEXTPOWER 100
Detailed Description	N-Channel 100 V 53A (Ta) 111W (Ta) Through Hole I2PAK
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		NXP Semiconductors
Series
Packaging		Bulk
Part Status		Active
Package / Case		TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		53A (Ta)
Rds On (Max) @ Id, Vgs		18mOhm @ 15A, 10V
Power Dissipation (Max)		111W (Ta)
Vgs(th) (Max) @ Id		4V @ 1mA
Supplier Device Package		I2PAK
Drive Voltage (Max Rds On, Min Rds On)		7V, 10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		100 V
Gate Charge (Qg) (Max) @ Vgs		21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		1482 pF @ 50 V

RESOURCE TYPE		LINK
Datasheets		PSMN018-100ESFQ

ATTRIBUTE		DESCRIPTION
Moisture Sensitivity Level (MSL)		Vendor Undefined
REACH Status		REACH Unaffected

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