NVMFWS003P03P8ZT1G _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	NVMFWS003P03P8ZT1G
Manufacturer	Sanyo Semiconductor/onsemi
Other Part Numbers	488-NVMFWS003P03P8ZT1GTR-ND 488-NVMFWS003P03P8ZT1GCT-ND 488-NVMFWS003P03P8ZT1GDKR-ND 488-NVMFWS003P03P8ZT1GDKR 488-NVMFWS003P03P8ZT1GTR 488-NVMFWS003P03P8ZT1GCT
Description	PFET SO8FL -30V 3MO
Detailed Description	P-Channel 30 V 35.7A (Ta), 234A (Tc) 3.9W (Ta), 168.7W (Tc) Surface Mount, Wettable Flank 5-DFNW (4.9x5.9) (8-SOFL-WF)
Manufacturer Standard Lead Time	26 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Sanyo Semiconductor/onsemi
Series
Packaging		Tape & Reel (TR) Cut Tape (CT)
Part Status		Active
Package / Case		8-PowerTDFN, 5 Leads
Mounting Type		Surface Mount, Wettable Flank
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		P-Channel
Current - Continuous Drain (Id) @ 25°C		35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs		1.8mOhm @ 23A, 10V
Power Dissipation (Max)		3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id		3V @ 250µA
Supplier Device Package		5-DFNW (4.9x5.9) (8-SOFL-WF)
Drive Voltage (Max Rds On, Min Rds On)		4.5V, 10V
Vgs (Max)		±25V
Drain to Source Voltage (Vdss)		30 V
Gate Charge (Qg) (Max) @ Vgs		167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds		12120 pF @ 15 V

RESOURCE TYPE		LINK
Datasheets		NVMFWS003P03P8ZT1G

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

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