IXFH26N50 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IXFH26N50
Manufacturer	Littelfuse / IXYS RF
Other Part Numbers	IXFH26N50-ND IXFH26N50-NDR
Description	MOSFET N-CH 500V 26A TO247AD
Detailed Description	N-Channel 500 V 26A (Tc) 300W (Tc) Through Hole TO-247AD (IXFH)
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Littelfuse / IXYS RF
Series		HiPerFET™
Packaging		Tube
Part Status		Not For New Designs
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		26A (Tc)
Rds On (Max) @ Id, Vgs		200mOhm @ 13A, 10V
Power Dissipation (Max)		300W (Tc)
Vgs(th) (Max) @ Id		4V @ 4mA
Supplier Device Package		TO-247AD (IXFH)
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		500 V
Gate Charge (Qg) (Max) @ Vgs		160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		4200 pF @ 25 V

RESOURCE TYPE		LINK
Datasheets		IXFH26N50

ATTRIBUTE		DESCRIPTION
California Prop 65		California Prop 65 Information
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		Not Applicable
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

Not recommended for new design, minimums may apply.

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