IRL2910L _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IRL2910L
Manufacturer	IR (Infineon Technologies)
Other Part Numbers	IRL2910L-ND *IRL2910L
Description	MOSFET N-CH 100V 55A TO262
Detailed Description	N-Channel 100 V 55A (Tc) 3.8W (Ta), 200W (Tc) Through Hole TO-262
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		IR (Infineon Technologies)
Series		HEXFET®
Packaging		Tube
Part Status		Obsolete
Package / Case		TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		55A (Tc)
Rds On (Max) @ Id, Vgs		26mOhm @ 29A, 10V
Power Dissipation (Max)		3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id		2V @ 250µA
Supplier Device Package		TO-262
Drive Voltage (Max Rds On, Min Rds On)		4V, 10V
Vgs (Max)		±16V
Drain to Source Voltage (Vdss)		100 V
Gate Charge (Qg) (Max) @ Vgs		140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds		3700 pF @ 25 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		RoHS non-compliant

This product is no longer manufactured.