IRF614 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IRF614
Manufacturer	Harris Corporation
Other Part Numbers	2156-IRF614-ND HARHARIRF614 2156-IRF614
Description	ADVANCED POWER MOSFET
Detailed Description	N-Channel 250 V 2.7A (Tc) 36W (Tc) Through Hole TO-220AB

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Harris Corporation
Series
Packaging		Bulk
Part Status		Active
Package / Case		TO-220-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		2.7A (Tc)
Rds On (Max) @ Id, Vgs		2Ohm @ 1.6A, 10V
Power Dissipation (Max)		36W (Tc)
Vgs(th) (Max) @ Id		4V @ 250µA
Supplier Device Package		TO-220AB
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		250 V
Gate Charge (Qg) (Max) @ Vgs		8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		140 pF @ 25 V

RESOURCE TYPE		LINK

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		0000.00.0000
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		Vendor Undefined
RoHS Status		RoHS non-compliant

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