IPP100N06S3-04 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IPP100N06S3-04
Manufacturer	IR (Infineon Technologies)
Other Part Numbers	IPP100N06S3-04IN-ND IPP100N06S304XK IPP100N06S304X IPP100N06S3-04IN SP000102212 IPP100N06S3-04-ND
Description	MOSFET N-CH 55V 100A TO220-3
Detailed Description	N-Channel 55 V 100A (Tc) 214W (Tc) Through Hole PG-TO220-3-1
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		IR (Infineon Technologies)
Series		OptiMOS™
Packaging		Tube
Part Status		Obsolete
Package / Case		TO-220-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		100A (Tc)
Rds On (Max) @ Id, Vgs		4.4mOhm @ 80A, 10V
Power Dissipation (Max)		214W (Tc)
Vgs(th) (Max) @ Id		4V @ 150µA
Supplier Device Package		PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		55 V
Gate Charge (Qg) (Max) @ Vgs		314 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		14230 pF @ 25 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected

This product is no longer manufactured.