IMBG65R015M2HXTMA1

Part Number	IMBG65R015M2HXTMA1
Manufacturer	IR (Infineon Technologies)
Other Part Numbers	448-IMBG65R015M2HXTMA1TR-ND 448-IMBG65R015M2HXTMA1CT-ND 448-IMBG65R015M2HXTMA1DKR-ND SP005917205 448-IMBG65R015M2HXTMA1DKR 448-IMBG65R015M2HXTMA1CT 448-IMBG65R015M2HXTMA1TR
Description	SILICON CARBIDE MOSFET
Detailed Description	N-Channel 650 V 115A (Tc) 416W (Tc) Surface Mount PG-TO263-7-12
Manufacturer Standard Lead Time	26 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		IR (Infineon Technologies)
Series		CoolSiC™ Gen 2
Packaging		Tape & Reel (TR) Cut Tape (CT)
Part Status		Active
Package / Case		TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 175°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		115A (Tc)
Rds On (Max) @ Id, Vgs		18mOhm @ 64.2A, 18V
Power Dissipation (Max)		416W (Tc)
Vgs(th) (Max) @ Id		5.6V @ 13mA
Supplier Device Package		PG-TO263-7-12
Drive Voltage (Max Rds On, Min Rds On)		15V, 20V
Vgs (Max)		+23V, -7V
Drain to Source Voltage (Vdss)		650 V
Gate Charge (Qg) (Max) @ Vgs		79 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds		2792 pF @ 400 V

RESOURCE TYPE		LINK
Datasheets		IMBG65R015M2HXTMA1

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

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