C3M0032120J1 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	C3M0032120J1
Manufacturer	Wolfspeed
Other Part Numbers	1697-C3M0032120J1-ND 1697-C3M0032120J1TR -3312-C3M0032120J1CT-ND -3312-C3M0032120J1CT -3312-C3M0032120J1TR-ND 1697-C3M0032120J1DKR -3312-C3M0032120J1DKR-ND -3312-C3M0032120J1 1697-C3M0032120J1CT-ND -3312-C3M0032120J1DKRINACTIVE 1697-C3M0032120J1DKR-ND 1697-C3M0032120J1TR-ND 1697-C3M0032120J1CT 1697-C3M0032120J1 -3312-C3M0032120J1DKR -3312-C3M0032120J1TR
Description	1200V 32MOHM SIC MOSFET
Detailed Description	N-Channel 1200 V 68A (Tc) 277W (Tc) Surface Mount TO-263-7
Manufacturer Standard Lead Time	34 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Wolfspeed
Series		C3M™
Packaging		Tube
Part Status		Active
Package / Case		TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type		Surface Mount
Operating Temperature		-40°C ~ 150°C (TJ)
Technology		SiCFET (Silicon Carbide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		68A (Tc)
Rds On (Max) @ Id, Vgs		43mOhm @ 41.4A, 15V
Power Dissipation (Max)		277W (Tc)
Vgs(th) (Max) @ Id		3.6V @ 11.5mA
Supplier Device Package		TO-263-7
Drive Voltage (Max Rds On, Min Rds On)		15V
Vgs (Max)		+15V, -4V
Drain to Source Voltage (Vdss)		1200 V
Gate Charge (Qg) (Max) @ Vgs		111 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds		3424 pF @ 1000 V

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		3 (168 Hours)
REACH Status		REACH Affected
RoHS Status		ROHS3 Compliant

Can ship immediately.

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