Part Number |
WNSC5D10650T6J
|
---|---|
Manufacturer | WeEn Semiconductors Co., Ltd |
Other Part Numbers |
1740-WNSC5D10650T6JTR-ND
1740-WNSC5D10650T6JTR
934072952118
|
Description | DIODE SIL CARBIDE 650V 10A 5DFN |
Detailed Description | Diode 650 V 10A Surface Mount 5-DFN (8x8) |
Category | ||
---|---|---|
Manufacturer | WeEn Semiconductors Co., Ltd | |
Series | ||
Packaging |
Tape & Reel (TR)
|
|
Part Status | Active | |
Package / Case | 4-VSFN Exposed Pad | |
Mounting Type | Surface Mount | |
Speed | No Recovery Time > 500mA (Io) | |
Reverse Recovery Time (trr) | 0 ns | |
Technology | SiC (Silicon Carbide) Schottky | |
Capacitance @ Vr, F | 323pF @ 1V, 1MHz | |
Current - Average Rectified (Io) | 10A | |
Supplier Device Package | 5-DFN (8x8) | |
Operating Temperature - Junction | -55°C ~ 175°C | |
Voltage - DC Reverse (Vr) (Max) | 650 V | |
Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A | |
Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
RESOURCE TYPE | LINK |
---|
ATTRIBUTE | DESCRIPTION | |
---|---|---|
ECCN | EAR99 | |
HTSUS | 8541.10.0080 |
QUANTITY | UNIT PRICE | EXT PRICE |
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