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TRS4E65F,S1Q

Part Number
TRS4E65F,S1Q
Manufacturer Toshiba Electronic Devices and Storage Corporation
Other Part Numbers
264-TRS4E65FS1Q-ND
TRS4E65F,S1Q(S
264-TRS4E65FS1Q
Description DIODE SIL CARB 650V 4A TO220-2L
Detailed Description Diode 650 V 4A Through Hole TO-220-2L
Manufacturer Standard Lead Time 20 weeks

Product Attributes

Category
Manufacturer Toshiba Electronic Devices and Storage Corporation
Series
Packaging
Tube
Part Status Active
Package / Case TO-220-2
Mounting Type Through Hole
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Technology SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F 16pF @ 650V, 1MHz
Current - Average Rectified (Io) 4A
Supplier Device Package TO-220-2L
Operating Temperature - Junction 175°C (Max)
Voltage - DC Reverse (Vr) (Max) 650 V
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 4 A
Current - Reverse Leakage @ Vr 20 µA @ 650 V

Documents & Media

RESOURCE TYPE LINK

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.10.0080

Available To Order

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