TRS3E65F,S1Q _ Single Diodes_Rectifiers_Diodes_Discrete Semiconductor Products_

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TRS3E65F,S1Q

TRS3E65F,S1Q

Part Number	TRS3E65F,S1Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Other Part Numbers	264-TRS3E65FS1Q-ND TRS3E65F,S1Q(S 264-TRS3E65FS1Q
Description	DIODE SIL CARB 650V 3A TO220-2L
Detailed Description	Diode 650 V 3A Through Hole TO-220-2L
Manufacturer Standard Lead Time	24 weeks

Product Attributes

Category		Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Manufacturer		Toshiba Electronic Devices and Storage Corporation
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-220-2
Mounting Type		Through Hole
Speed		No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)		0 ns
Technology		SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F		12pF @ 650V, 1MHz
Current - Average Rectified (Io)		3A
Supplier Device Package		TO-220-2L
Operating Temperature - Junction		175°C (Max)
Voltage - DC Reverse (Vr) (Max)		650 V
Voltage - Forward (Vf) (Max) @ If		1.6 V @ 3 A
Current - Reverse Leakage @ Vr		20 µA @ 650 V

Documents & Media

RESOURCE TYPE		LINK

Environmental & Export Classifications

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.10.0080

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