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RN2119MFV(TPL3)

Part Number
RN2119MFV(TPL3)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Other Part Numbers
RN2119MFV(TPL3)TR-ND
RN2119MFV(TPL3)CT-ND
RN2119MFV(TPL3)DKR-ND
RN2119MFV(TPL3)CT
RN2119MFV(TPL3)DKR
RN2119MFV(TPL3)TR
RN2119MFV(TPL3)-ND
Description TRANS PREBIAS PNP 50V 0.1A VESM
Detailed Description Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 150 mW Surface Mount VESM

Product Attributes

Category
Manufacturer Toshiba Electronic Devices and Storage Corporation
Series
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Part Status Active
Package / Case SOT-723
Mounting Type Surface Mount
Transistor Type PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 5mA
Current - Collector Cutoff (Max) 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA, 5V
Supplier Device Package VESM
Current - Collector (Ic) (Max) 100 mA
Voltage - Collector Emitter Breakdown (Max) 50 V
Power - Max 150 mW
Resistor - Base (R1) 1 kOhms

Documents & Media

RESOURCE TYPE LINK

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.21.0095
Moisture Sensitivity Level (MSL) 1 (Unlimited)
RoHS Status RoHS Compliant

In Stock: 3000

Can ship immediately.
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