Part Number |
NXV08A170DB2
|
---|---|
Manufacturer | Sanyo Semiconductor/onsemi |
Other Part Numbers |
488-NXV08A170DB2-ND
488-NXV08A170DB2
|
Description | APM12-CBA, MV7 80V, AL2O3, HALF |
Detailed Description | Mosfet Array 80V 200A (Tj) Through Hole APM12-CBA |
Manufacturer Standard Lead Time | 21 weeks |
Category | ||
---|---|---|
Manufacturer | Sanyo Semiconductor/onsemi | |
Series | ||
Packaging |
Tray
|
|
Part Status | Active | |
Package / Case | 12-PowerDIP Module (1.118", 28.40mm) | |
Mounting Type | Through Hole | |
Configuration | 2 N-Channel (Half Bridge) | |
Operating Temperature | 175°C (TJ) | |
Technology | MOSFET (Metal Oxide) | |
Drain to Source Voltage (Vdss) | 80V | |
Current - Continuous Drain (Id) @ 25°C | 200A (Tj) | |
Input Capacitance (Ciss) (Max) @ Vds | 14000pF @ 40V | |
Rds On (Max) @ Id, Vgs | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | |
Gate Charge (Qg) (Max) @ Vgs | 195nC @ 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Supplier Device Package | APM12-CBA | |
Grade | Automotive | |
Qualification | AEC-Q100 |
RESOURCE TYPE | LINK | |
---|---|---|
Datasheets | NXV08A170DB2 |
ATTRIBUTE | DESCRIPTION | |
---|---|---|
Moisture Sensitivity Level (MSL) | Not Applicable | |
REACH Status | REACH Unaffected | |
RoHS Status | ROHS3 Compliant |
QUANTITY | UNIT PRICE | EXT PRICE |
---|---|---|
{{ numberFormat(price.break_quantity) }} | {{ priceFormat(price.unit_price) }} | {{ priceFormat(price.break_quantity * price.unit_price) }} |