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NXH100B120H3Q0PG

NXH100B120H3Q0PG

Part Number
NXH100B120H3Q0PG
Manufacturer Sanyo Semiconductor/onsemi
Other Part Numbers
5556-NXH100B120H3Q0PG-ND
488-NXH100B120H3Q0PG
5556-NXH100B120H3Q0PG
488-NXH100B120H3Q0PG-ND
Description PIM 60-80KW Q0BOOST-L57 1200V, 1
Detailed Description IGBT Module Trench Field Stop 2 Independent 1200 V 61 A 186 W Chassis Mount 22-PIM (55x32.5)
Manufacturer Standard Lead Time 45 weeks
Datasheet Datasheet

Product Attributes

Category
Manufacturer Sanyo Semiconductor/onsemi
Series
Packaging
Tray
Part Status Active
Package / Case Module
Mounting Type Chassis Mount
Input Standard
Configuration 2 Independent
Operating Temperature -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 50A
NTC Thermistor No
Supplier Device Package 22-PIM (55x32.5)
IGBT Type Trench Field Stop
Current - Collector (Ic) (Max) 61 A
Voltage - Collector Emitter Breakdown (Max) 1200 V
Power - Max 186 W
Current - Collector Cutoff (Max) 200 µA
Input Capacitance (Cies) @ Vce 9.075 nF @ 20 V

Documents & Media

RESOURCE TYPE LINK
Datasheets NXH100B120H3Q0PG
PCN Assembly/Origin Wafer Fab Change 27/Dec/2022

Environmental & Export Classifications

ATTRIBUTE DESCRIPTION
ECCN EAR99
HTSUS 8541.29.0095
Moisture Sensitivity Level (MSL) Not Applicable
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant

In Stock: 24

Can ship immediately.
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