AFGHL50T65SQD

Part Number	AFGHL50T65SQD
Manufacturer	Sanyo Semiconductor/onsemi
Other Part Numbers	488-AFGHL50T65SQD-ND 488-AFGHL50T65SQD
Description	AEC 101 QUALIFIED, 650V, 50A FIE
Detailed Description	IGBT Trench Field Stop 650 V 80 A 268 W Through Hole TO-247-3
Manufacturer Standard Lead Time	21 weeks
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors IGBTs Single IGBTs
Manufacturer		Sanyo Semiconductor/onsemi
Series
Packaging		Tube
Part Status		Active
Package / Case		TO-247-3
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 175°C (TJ)
Input Type		Standard
Vce(on) (Max) @ Vge, Ic		2.1V @ 15V, 50A
Supplier Device Package		TO-247-3
IGBT Type		Trench Field Stop
Td (on/off) @ 25°C		20ns/81ns
Switching Energy		950µJ (on), 460µJ (off)
Test Condition		400V, 50A, 4.7Ohm, 15V
Gate Charge		102 nC
Grade		Automotive
Current - Collector (Ic) (Max)		80 A
Voltage - Collector Emitter Breakdown (Max)		650 V
Current - Collector Pulsed (Icm)		200 A
Power - Max		268 W
Qualification		AEC-Q101

RESOURCE TYPE		LINK
Datasheets		AFGHL50T65SQD
Environmental Information		onsemi RoHS
Environmental Information		onsemi REACH
PCN Assembly/Origin		Wafer Fab 09/May/2023
PCN Packaging		Packing quantity increase 25/Jun/2021
HTML Datasheet		AFGHL50T65SQD

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		Not Applicable
REACH Status		REACH Unaffected
RoHS Status		ROHS3 Compliant

Can ship immediately.

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