IRFD210 _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IRFD210
Manufacturer	Vishay / Siliconix
Other Part Numbers	IRFD210-ND *IRFD210
Description	MOSFET N-CH 200V 600MA 4DIP
Detailed Description	N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Vishay / Siliconix
Series
Packaging		Tube
Part Status		Obsolete
Package / Case		4-DIP (0.300", 7.62mm)
Mounting Type		Through Hole
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		600mA (Ta)
Rds On (Max) @ Id, Vgs		1.5Ohm @ 360mA, 10V
Power Dissipation (Max)		1W (Ta)
Vgs(th) (Max) @ Id		4V @ 250µA
Supplier Device Package		4-HVMDIP
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±20V
Drain to Source Voltage (Vdss)		200 V
Gate Charge (Qg) (Max) @ Vgs		8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		140 pF @ 25 V

RESOURCE TYPE		LINK
Datasheets		IRFD210

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		RoHS non-compliant

This product is no longer manufactured.