IRF830AS _ Single FETs, MOSFETs_FETs, MOSFETs_Transistors_Discrete Semiconductor Products

Part Number	IRF830AS
Manufacturer	Vishay / Siliconix
Other Part Numbers	IRF830AS-ND *IRF830AS
Description	MOSFET N-CH 500V 5A D2PAK
Detailed Description	N-Channel 500 V 5A (Tc) 3.1W (Ta), 74W (Tc) Surface Mount TO-263 (D2PAK)
Datasheet	Datasheet

Category		Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
Manufacturer		Vishay / Siliconix
Series
Packaging		Tube
Part Status		Obsolete
Package / Case		TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type		Surface Mount
Operating Temperature		-55°C ~ 150°C (TJ)
Technology		MOSFET (Metal Oxide)
FET Type		N-Channel
Current - Continuous Drain (Id) @ 25°C		5A (Tc)
Rds On (Max) @ Id, Vgs		1.4Ohm @ 3A, 10V
Power Dissipation (Max)		3.1W (Ta), 74W (Tc)
Vgs(th) (Max) @ Id		4.5V @ 250µA
Supplier Device Package		TO-263 (D2PAK)
Drive Voltage (Max Rds On, Min Rds On)		10V
Vgs (Max)		±30V
Drain to Source Voltage (Vdss)		500 V
Gate Charge (Qg) (Max) @ Vgs		24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds		620 pF @ 25 V

RESOURCE TYPE		LINK
Datasheets		IRF830AS

ATTRIBUTE		DESCRIPTION
ECCN		EAR99
HTSUS		8541.29.0095
Moisture Sensitivity Level (MSL)		1 (Unlimited)
REACH Status		REACH Unaffected
RoHS Status		RoHS non-compliant

This product is no longer manufactured.